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SI4532DY September 1999 SI4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 3.9A, 30V.RDS(ON) = 0.065 @VGS = 10V RDS(ON) = 0.095 @VGS = 4.5V. P-Channel -3.5A,-30V.RDS(ON)= 0.085 @VGS = -10V RDS(ON)= 0.190 @VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ' ' ' ' 62 6 * 6 * $EVROXWH 0D[LP XP 5DWLQJV 6\ P ERO W '66 W *66 D' 9 h v T pr AW yh t r B h r T pr AW yh t r 9 h v A8 r A8 v A AQ yrq Q' U $ A2A! $ 8 A yr A u r v r A r q 3 DUDP HWHU 1 & K DQ QHO " ! 3 & K DQ Q HO " ! " $ ! ! 8 Q LWV W W 6 AAAAAAAAAAAAAAAAAAAAAAI r A h " ( ! Q r A9 vv h v As A9 h yAP r h v Q r A9 vv h v As AT v t yr AP r hv AAAAAAAAAAAAI r A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA I r A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA I r A h i X % p ( $ $ A A $ U -AU 67* P r h v t Ah q AT h t rAE pv AU r r h r AS h t r 8 7KHUP DO &KDUDFWHULVWLFV S S -$ -& U u r h yAS rvh pr AE pv 6 i vr U u r h yAS rvh pr AE pv 8 h r AAI r A % ! $ # 8 X 8 X 3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUP DWLRQ 9 r vp r AHh x v t # $" ! 9 r vp r T v# $ " ! 9 S r r yAT vr " U h r AX vq u ! R h v ! $ A v AAA A9vrAhqA h sh p vt A p r Aiwr p AAp uh t r A vu Av A vsvp h v (c)1999 Fairchild Semiconductor Corporation SI4532DY, Rev. C SI4532DY (OHFWULFDO &KDUDFWHULVWLFV 6\PERO 3DUDPHWHU U A2A!$8AyrAurvrArq $ 7HVW &RQGLWLRQV 7\SH 0LQ 7\S 0D[ 8QLWV 2II &KDUDFWHULVWLFV 7W'66 9hvTprA7rhxq Wyhtr D'66 arABhrAWyhtrA9hvA8r W*6A2AAWAD'A2A!$A 6 W*6A2AAWAD'A2A!$A 6 W'6A2A!#AWAW*6A2AAW W'6A2A!#AWAW*6A2AAW I8u Q8u I8u Q8u 6yy 6yy " " W W 6 6 6 6 D*66) D*665 Bhr7qAGrhxhtrAAhq Bhr7qAGrhxhtrASrrr W*6A2A!AWAW'6A2AAW W*6A2A!AWAW'6A2AAW 2Q &KDUDFWHULVWLFV W*6WK IrA! BhrAUuruyqAWyhtr W'6A2AW*6AD'A2A!$A 6 W'6A2AW*6AD'A2A!$A 6 I8u Q8u I8u A $" ' " AAA" %$ ($ '$ ( W W S'6RQ ThvpA9hvTprAP Srvhpr W*6A2A AWAD'A2A"(A6 W*6A2A#$AWAD'A2A" A6 W*6A2A AWAD'A2A!$A6 W*6A2A#$AWAD'A2A 'A6 Q8u % ($ D'RQ PThrA9hvA8r W*6A2A AWAW'6A2A$AW W*6A2A AWAW'6A2A$AW I8u Q8u I8u Q8u $ $ & $ 6 t)6 AhqAUhpqphpr W'6A2A $AWAD'A2A"(A6 W'6A2A $AWAD'A2A!$A6 T '\QDPLF &KDUDFWHULVWLFV 8LVV DA8hhpvhpr W'6A2A AWAW*6A2AAW AsA2A AHC 8RVV DA8hhpvhpr W'6A2A AWAW*6A2AAW AsA2A AHC 8UVV SrrrAUhsrA8hhpvhpr I8u Q8u I8u Q8u I8u Q8u !"$ #! $ # #( % A A A SI4532DY, Rev. C SI4532DY (OHFWULFDO &KDUDFWHULVWLFV 6\PERO 3DUDPHWHU FRQWLQXHG 7HVW &RQGLWLRQV 7\SH 0LQ 7\S 0D[ 8QLWV 6ZLWFKLQJ &KDUDFWHULVWLFV q UPA9ryhAUvr IrA! W99A2A AWAD9A2A A6 WBTA2A AWASB@IA2A%A I8u & ( ' ' $ ' ' % " ' !( % !& !( ' ! ' ' Q8u I8u Q8u UPASvrAUvr qss UPssA9ryhAUvr W99A2A AWAD9A2A!$A6 WBTA2A AWASB@IA2A%A I8u Q8u I8u Q8u s UPssAAhyyAUvr 9hvTprASrrrASrprAUvr DAA2A &A6AqvqA2A 6 DAA2A &A6AqvqA2A 6 Rt UhyABhrA8uhtr W9TA2A AWAD9A2A"(A6 WBTA2A AW Rt BhrTprA8uhtr W9TA2A AWAD9A2A!$A6 WBTA2A AW Rtq Bhr9hvA8uhtr I8u Q8u I8u Q8u I8u Q8u I8u Q8u "& $ ( & ( ' T $ $ 8 8 8 'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV DT HhvA8vA9hvTprA9vqrAAhqA8r I8u Q8u WT9 9hvTprA9vqrAAhq Wyhtr WBTA2AAWADTA2A &A6 IrA! & & &$ ! 6 6 W I8u WBTA2AAWADTA2A &A6 IrA! Q8u &$ ! W Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78 C/W when mounted on a 0.05 in2 pad of 2 oz. copper. b) 125 C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 135 C/W when mounted on a minimum mounting pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% SI4532DY, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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